Abstract
The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al2 O3 films in a metal/ Al2 O3 [TiN Al2 O3] Si O2 p-Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in Al2 O3 films after subsequent annealing treatment. The TiN nanocrystals with a high density of >1× 1012 cm2 and a small size of <3 nm have been observed. A large hysteresis memory window of ∼4.3 V at small sweeping gate voltage of 3 V has been observed as compared with a pure Al2 O3 charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of 1.4 V has also been observed under an extremely small sweeping gate voltage of 1 V. A large memory window of ∼3.9 V is observed after 10 years of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.
Original language | English |
---|---|
Article number | 043114 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 4 |
DOIs | |
State | Published - 2007 |
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Maikap, S., Tzeng, P. J., Lee, H. Y., Wang, C. C., Tien, T. C., Lee, L. S., & Tsai, M. J. (2007). Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. Applied Physics Letters, 91(4), Article 043114. https://doi.org/10.1063/1.2766680
Maikap, S. ; Tzeng, P. J. ; Lee, H. Y. et al. / Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. In: Applied Physics Letters. 2007 ; Vol. 91, No. 4.
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title = "Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors",
abstract = "The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al2 O3 films in a metal/ Al2 O3 [TiN Al2 O3] Si O2 p-Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in Al2 O3 films after subsequent annealing treatment. The TiN nanocrystals with a high density of >1× 1012 cm2 and a small size of <3 nm have been observed. A large hysteresis memory window of ∼4.3 V at small sweeping gate voltage of 3 V has been observed as compared with a pure Al2 O3 charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of 1.4 V has also been observed under an extremely small sweeping gate voltage of 1 V. A large memory window of ∼3.9 V is observed after 10 years of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.",
author = "S. Maikap and Tzeng, {P. J.} and Lee, {H. Y.} and Wang, {C. C.} and Tien, {T. C.} and Lee, {L. S.} and Tsai, {M. J.}",
year = "2007",
doi = "10.1063/1.2766680",
language = "英语",
volume = "91",
journal = "Applied Physics Letters",
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Maikap, S, Tzeng, PJ, Lee, HY, Wang, CC, Tien, TC, Lee, LS & Tsai, MJ 2007, 'Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors', Applied Physics Letters, vol. 91, no. 4, 043114. https://doi.org/10.1063/1.2766680
Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. / Maikap, S.; Tzeng, P. J.; Lee, H. Y. et al.
In: Applied Physics Letters, Vol. 91, No. 4, 043114, 2007.
Research output: Contribution to journal › Journal Article › peer-review
TY - JOUR
T1 - Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors
AU - Maikap, S.
AU - Tzeng, P. J.
AU - Lee, H. Y.
AU - Wang, C. C.
AU - Tien, T. C.
AU - Lee, L. S.
AU - Tsai, M. J.
PY - 2007
Y1 - 2007
N2 - The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al2 O3 films in a metal/ Al2 O3 [TiN Al2 O3] Si O2 p-Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in Al2 O3 films after subsequent annealing treatment. The TiN nanocrystals with a high density of >1× 1012 cm2 and a small size of <3 nm have been observed. A large hysteresis memory window of ∼4.3 V at small sweeping gate voltage of 3 V has been observed as compared with a pure Al2 O3 charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of 1.4 V has also been observed under an extremely small sweeping gate voltage of 1 V. A large memory window of ∼3.9 V is observed after 10 years of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.
AB - The physical and electrical characteristics of atomic layer deposited TiN nanocrystals embedded in high- k Al2 O3 films in a metal/ Al2 O3 [TiN Al2 O3] Si O2 p-Si structure have been investigated. High-resolution transmission electron microscopy and x-ray photoelectron spectroscopy show the formation of tiny TiN nanocrystals embedded in Al2 O3 films after subsequent annealing treatment. The TiN nanocrystals with a high density of >1× 1012 cm2 and a small size of <3 nm have been observed. A large hysteresis memory window of ∼4.3 V at small sweeping gate voltage of 3 V has been observed as compared with a pure Al2 O3 charge trapping layer, due to highly charge confinement in the TiN metal nanocrystals. The hysteresis memory window of 1.4 V has also been observed under an extremely small sweeping gate voltage of 1 V. A large memory window of ∼3.9 V is observed after 10 years of retention. A maximum hysteresis memory window is limited by both of the nanocrystal density and leakage current at a high temperature annealing treatment of the TiN nanocrystal memory capacitors.
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U2 - 10.1063/1.2766680
DO - 10.1063/1.2766680
M3 - 文章
AN - SCOPUS:34547479883
SN - 0003-6951
VL - 91
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 043114
ER -
Maikap S, Tzeng PJ, Lee HY, Wang CC, Tien TC, Lee LS et al. Physical and electrical characteristics of atomic layer deposited TiN nanocrystal memory capacitors. Applied Physics Letters. 2007;91(4):043114. doi: 10.1063/1.2766680