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DOI:10.1109/IMW59701.2024.10536984 - Corpus ID: 269988847
@article{Lin2024ModelingAS, title={Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development}, author={Xi-Wei Lin and Salvatore M. Amoroso and Ko-Hsin Lee and Meng Hsuan Ke and Tue Gunst and Pavel Tikhomirov and Plamen Asenov}, journal={2024 IEEE International Memory Workshop (IMW)}, year={2024}, pages={1-4}, url={https://api.semanticscholar.org/CorpusID:269988847}}- Xi-Wei Lin, Salvatore M. Amoroso, P. Asenov
- Published in International Memory Workshop 12 May 2024
- Engineering, Computer Science, Physics
Examples are given to demonstrate the value of multiscale, multi-physics modeling of complex problems, including a) row hammer and 4F2 floating body effects in DRAM; b) RTN and program noise in 3D NAND; c) 3D unit process, integration, and wafer warpage.
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Fig. 10. a) ab initio DFT simulation of effective WF shift vs. TiN thickness; b) atomic configuration of TiN on HKMG.
Published in International Memory Workshop 2024
Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development
Xi-Wei LinSalvatore M. Amoroso P. Asenov
Figure 1 of 10
